NXP Semiconductors PHP20NQ20T,127 Configuration: Single Continuous Drain Current: 20 A Current - Continuous Drain (id) @ 25?° C: 20A Drain To Source Voltage (vdss): 200V Drain-source Breakdown Voltage: 200 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 65nC @ 10V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1951474 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 150W Power Dissipation: 150000 mW Rds On (max) @ Id, Vgs: 130 mOhm @ 10A, 10V Resistance Drain-source Rds (on): 0.13 Ohm @ 10 V Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 200 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.13 Ohms Fall Time: 38 ns Rise Time: 46 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 50 ns Part # Aliases: PHP20NQ20T Other Names: 934055762127::PHP20NQ20T::PHP20NQ20T